Memory
Устройство памяти
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|
|
|
^M (Bit) |
(ns) |
Iff№ (V) |
ВЛ№ |
|
|
|
Device Model |
Type |
Radiation Hardness |
Capacity (Bit) |
Access Time (ns) |
Operating Voltage (V) |
Input Level |
Package |
Compatible Model |
|
Модель |
Тип |
Радиационная стойкость |
Ёмкость (Бит) |
Время доступа (нс) |
Рабочее напряжение (В) |
Входной уровень |
Типы корпусов |
Совместимая модель |
|
B7156ARH |
SRAM |
|
32Kx8 |
40 |
5 |
TTL |
CDIP28 |
UT7156 |
|
B65608EARH |
SRAM |
|
128Kx8 |
45 |
5 |
TTL |
CQFP68 |
M65608E |
|
B8R128K32RH |
SRAM |
|
128Kx32 |
15 |
Core:1.8 I/O:3.3 |
CMOS |
CQFP68 |
UT8R128K32 |
|
B8CR256K32RH |
SRAM |
|
256Kx32 |
25 |
Core:1.8 I/O:3.3 |
CMOS |
CQFP68 |
-- |
|
B8R512K8ARH |
SRAM |
|
512Kx8 |
17 |
Core:1.8 I/O:3.3 |
CMOS |
CFP36 |
UT8R512K8 |
|
B9Q512ERFC |
SRAM |
TID > 100krad(Si) SEL > 75MeV • cm2/mg SEU Error Rate < 1E-10 |
512Kx8 |
20 |
Single power supply 5 or 3.3 |
TTL |
CFP36 |
UT8Q512E UT9Q512E |
|
B8CR512K32ARH |
SRAM |
error/bit-day in Geosynchronous Orbit |
512Kx32 |
19 |
Core:1.8 I/O:3.3 |
CMOS |
CQFP68 |
UT8CR512K32 |
|
B9Q512K32ERH |
SRAM |
|
512Kx32 |
25 |
5 or 3.3 |
TTL |
CFP68 |
UT8Q512K32E UT9Q512K32E |
|
B8R512K39RH |
SRAM |
|
512Kx39 |
Read: 20 Write:10 |
Core:1.2 I/O:3.3 |
CMOS |
CQFP84 |
-- |
|
B8CR1M32RH |
SRAM |
|
1Mx32 |
Read: 20 Write:10 |
Core:1.2 I/O:3.3 |
CMOS |
CQFP84 |
UT8ER1M32 |
|
B8CR1M39RH |
SRAM |
|
1Mx39 |
Read: 20 Write:10 |
Core:1.2 I/O:3.3 |
CMOS |
CQFP84 |
UT8R1M39 |
|
B8CR2M32RH |
SRAM |
|
2Mx32 |
Read: 20 Write:10 |
Core:1.2 I/O:3.3 |
CMOS |
CQFP84 |
UT8ER2M32 |
|
|
ш |
|
^S (Bit) |
(ns) |
!№№ (V) |
ВЛ№ |
|
|
|
Device Model |
Type |
Radiation Hardness |
Capacity (Bit) |
Access Time (ns) |
Operating Voltage (V) |
Input Level |
Package |
Compatible Model |
|
Модель |
Тип |
Радиационная стойкость |
Ёмкость (Бит) |
Время доступа (нс) |
Рабочее напряжение (В) |
Входной уровень |
Типы корпусов |
Совместимая модель |
|
*B8CR2M40RQC |
SRAM |
|
2Mx40 |
Read: 20 Write:10 |
Core:1.2 I/O:3.3 |
CMOS |
CQFP84 |
-- |
|
*B8Q2M40RQC |
SRAM |
|
2Mx40 |
Read: 20 Write:10 |
3.3 |
CMOS |
CQFP84 |
-- |
|
*B8Q1M40RQC |
SRAM |
TID > 100krad(Si) SEL > 75MeV • cm2/mg SEU Error Rate < 1E-10 error/bit-day in Geosynchronous Orbit |
1Mx40 |
Read: 20 Write:10 |
3.3 |
CMOS |
CQFP84 |
-- |
|
B7134RH |
Dual port SRAM |
4Kx8 |
35 |
5 |
TTL |
CDIP48 |
IDT7134 |
|
|
B7006RH |
Dual port SRAM |
16Kx8 |
40 |
5 |
TTL |
CQFP68 |
IDT7006 |
|
|
*B1480RH |
SYNC SRAM |
|
2Mx36 |
Operating frequency: 250MHz |
Vdd:3.135V ~ 3.6V Vddq: 2.375V ~ 2.625V or 3.135V ~ vdd |
CMOS |
CBGA165 |
CY7C1480V33 |
|
*B1472RH |
NOBL SRAM |
|
4Mx18 |
Operating frequency: 167MHz |
Vdd:3.135V ~ 3.6V Vddq: 2.375V ~ 2.625V or 3.135V ~ vdd |
CMOS |
CBGA165 |
CY7C1472BV33 |
|
*B1245RH |
QDR SRAM |
TID > 300krad(Si) SEL > 75MeV • cm2/mg SEU Error Rate < 1E-10 error/bit-day in |
1Mx36 |
Operating frequency: 250MHz |
Vdd:1.8, I/O: 1.4 ~ vdd |
HSTL |
CCGA165 |
CY7C12451KV18 |
|
*B1545RH |
QDR SRAM |
2Mx36 |
Operating frequency: 250MHz |
Vdd:1.8, I/O: 1.4 ~ vdd |
HSTL |
CCGA165 |
CYRS1545AV18 |
|
|
*B1645RH |
QDR SRAM |
Geosynchronous Orbit |
4Mx36 |
Operating frequency: 400MHz |
Vdd:1.8, I/O: 1.4 ~ vdd |
HSTL |
CBGA165 |
CY7C1645KV18 |
|
*B4142RH |
QDR SRAM |
TID > 300krad(Si) SEL > 75MeV • cm2/mg SEU Error Rate < 1E-10 error/bit-day in Geosynchronous Orbit(add EDAC) |
4Mx36 |
Operating frequency: 933MHz |
Vdd:1.3, I/O: 1.2±0.05 |
HSTL |
CCGA361 |
CY7C4142KV13 |
|
B7204ARH |
Asynchronous FIFO |
TID > 100krad(Si) SEL > 75MeV • cm2/mg SEU > 37MeV- cm2/mg |
4Kx9 |
25 |
5 |
TTL |
CDIP28 |
IDT7204 |
|
B6664RH |
PROM |
|
8Kx8 |
60 |
5 |
TTL |
CDIP28 |
HS-6664RH |
|
B28F256RH |
PROM |
|
32Kx8 |
60 |
5 |
TTL |
CFP28 CDIP28 |
UT28F256QLE |
|
B28F256LVRH |
PROM |
|
32Kx8 |
65 |
3.3 |
CMOS |
CFP28 CDIP28 |
UT28F256LVQLE |
|
B28F1024RH |
PROM |
TID > 100krad(Si) |
32Kx32 |
60 |
5 |
TTL |
CQFP64 |
-- |
|
*B28F32K40LVRQC |
PROM |
SEL > 75MeV^ cm2/mg SEU > 37MeV^ cm2/mg SEU(memory cell) > 75MeV-cmVmg |
32Kx40 |
60 |
3.3 |
CMOS |
CQFP68 |
-- |
|
B18V04RQC |
FLASH |
4M |
Operating frequency: 20MHz |
3.3 |
TTL |
CQFJ44 |
XQR18V04 |
|
|
B17V16RQC |
PROM |
|
16M |
Operating frequency: 20MHz |
3.3 |
CMOS |
CQFJ44 |
XQR17V16 |
|
B17V64RQC |
PROM |
|
64M |
Operating frequency: 33MHz |
3.3 |
CMOS |
CQFJ44 |
-- |
|
*B17V128RQC |
PROM |
|
128M |
Operating frequency: 33MHz |
3.3 |
CMOS |
CQFP68 |
-- |
|
*B29GL128RSC |
FLASH |
TID > 100krad(Si) SEL > 75MeV^ cm2/mg SEU > 37MeV^ cm2/mg SEU(memory cell) > 75MeV^cm2/mg |
128M |
120 |
2.7 ~ 3.6 |
CMOS |
CSOP56 |
S29GL128S |
|
*B29GL256RSC |
FLASH |
256M |
120 |
2.7 ~ 3.6 |
CMOS |
CSOP56 |
S29GL256S |
|
|
|
(bit) |
wm |
жшда/ (MSPS) |
(V) |
(mW) |
«тел |
INL (LSB) |
DNL (LSB) |
SNR (dB) |
SFDR (dBc) |
|
|
|
Device Model |
Radiation Hardness |
Resolu tion (bit) |
Channels |
Update/ Sample Rate (MSPS) |
Operating Voltage (V) |
Power Consump tion (mW) |
Analog Input Range |
INL (LSB) |
DNL (LSB) |
SNR (dB) |
SFDR (dBc) |
Package |
Compatible Model |
|
Модель |
Радиационная стойкость |
Разреш ение (Бит) |
Количе ство каналов |
Коэффициент обновления данных/ Частота дискретизации (Мвыб./с) |
Рабочее напряж ение (В) |
Потребля емая мощность (МВт) |
Диапазон аналого вого входа |
Интеграл ьная нелинейн ость (младший бит) |
Диффере нциальная нелиней ность (младший бит) |
Отноше ние сигнал/ шум (dB) |
SFDR (dBc) |
Типы корпусов |
Совмест имая модель |
|
B9288ARQC |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
8 |
2 |
100 |
3 |
180 |
1Vp-p |
±1.5 |
±1 |
43 |
50 |
CQFP48 |
AD9288 |
|
B08D1000RH |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
8 |
2 |
1000 |
1.9 |
1600 |
0.56~ 0.84Vp-p |
±3 |
±1 |
43 |
47 |
CQFP128 |
ADC08D1000 |
|
B083000RQC |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
8 |
1 |
3000 |
1.9 |
1900 |
0.56~ 0.84Vp-p |
±2 |
±1 |
40 |
45 |
CQFP128 |
ADC083000 |
|
B7892RH |
TID > 100krad(Si) SEL > 75MeV • cm2/mg SEU > 37MeV• cm2/mg |
10 |
1 |
0.5 |
5 |
150 |
-10V ~ + 10V |
±1.5 |
±1.5 |
54 |
65 |
CDIP24 |
AD7892 |
|
B7892-5RH |
TID > 100krad(Si) SEL > 75MeV • cm2/mg SEU > 37MeV• cm2/mg |
10 |
1 |
0.5 |
5 |
150 |
0 ~ 5V |
±1.5 |
±1.5 |
53 |
64 |
CDIP24 |
AD7892 |
|
B2543ARH |
TID > 60Krad(Si) SEL > 75MeV • cm2/mg |
12 |
11 |
0.066 |
5 |
10 |
0 ~ 5V |
±1.5 |
-1 ~ +1.5 |
-- |
-- |
CDIP20 |
TLC2543M |
|
B128S102RH |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
12 |
8 |
1 |
2.7~ 5.25 |
5 |
0~Vcc |
±2 |
-0.9. +1.9 |
67 |
75 |
CFP16 |
ADC128S102 QML-SP |
|
B12D1000RH |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
12 |
2 |
1000 |
1.9 |
3200 |
0.6 ~ 1Vp-p |
±6 |
±1 |
52.3 |
57 |
CCGA376 |
ADC12D1000 |
|
B12D1600RAB |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
12 |
2 |
1600 |
1.9 |
3600 |
0.6 ~ 1Vp-p |
±6 |
±1 |
51.1 |
55 |
CCGA376 |
ADC12D1600 QML-SP |
|
*B12DJ3200RBB |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
12 |
2 |
3200 |
1.2/1.9 |
3000 |
0 ~ 1Vp-p |
±6 |
±1 |
52 |
60 |
CBGA144 |
ADC12DJ3200 |
|
B9243AMG |
TID > 100krad(Si) |
14 |
1 |
3 |
5 |
200 |
0 ~ 5V |
±2.5 |
±1 |
69 |
74 |
CPGA40 |
AD9243 |
|
B9240MGRH |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
14 |
1 |
10 |
5 |
320 |
0 ~ 5V |
±3.5 |
±1.5 |
68 |
71 |
CPGA40 |
AD9240 |
|
B9240MQRH |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
14 |
1 |
10 |
5 |
320 |
0 ~ 5V |
±3.5 |
±1.5 |
68 |
71 |
CQFP44 |
AD9240 |
|
B1401RFC |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
14 |
1 |
20 |
2.5 |
100 |
2Vp-p |
±4 |
±1 |
61 |
65 |
CFP48 |
RHF1401 |
|
B9942RH |
TID > 100krad(Si) SEL > 37MeV • cm2/mg |
14 |
2 |
40 |
3.3 |
600 |
0-1V |
-- |
±1 |
-- |
-- |
CCGA100 |
AD9942BBCZ |
|
B9643RQC |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
14 |
2 |
200 |
1.8 |
800 |
1.4 ~ 2Vp-p |
±6 |
±1.5 |
66 |
75 |
CQFP64 |
AD9643 |
|
BA16D310MRBB |
TID > 100krad(Si) SEL > 75MeV • cm2/mg |
16 |
2 |
250 |
3.3/1.8 |
2000 |
2 ~ 2.5Vp-p |
±10 |
(-1 ~ +3.5) |
70 |
75 |
CBGA144 |
AD9652 |