Global Power Technology-GPT - G3S06504C
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Category
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Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
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Mfr
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Global Power Technology-GPT
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Series
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-
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Packaging
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Bulk
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Part Status
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Active
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Technology
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SiC (Silicon Carbide) Schottky
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Voltage - DC Reverse (Vr) (Max)
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650 V
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Current - Average Rectified (Io)
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11.5A
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Voltage - Forward (Vf) (Max) @ If
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1.7 V @ 4 A
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Speed
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No Recovery Time > 500mA (Io)
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Reverse Recovery Time (trr)
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0 ns
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Current - Reverse Leakage @ Vr
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50 µA @ 650 V
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Capacitance @ Vr, F
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181pF @ 0V, 1MHz
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Mounting Type
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Surface Mount
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Package / Case
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TO-252-3, DPAK (2 Leads + Tab), SC-63
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Supplier Device Package
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TO-252
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Operating Temperature - Junction
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-55°C ~ 175°C
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